標題: Comparison of MONOS memory device integrity when using Hf(1-x-y)N(x)O(y) trapping layers with different N compositions
作者: Yang, H. J.
Cheng, C. F.
Chen, W. B.
Lin, S. H.
Yeh, F. S.
McAlister, Sean P.
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: erase;high-kappa;nonvolatile memory;program
公開日期: 1-Jun-2008
摘要: We have studied the nitrogen composition dependence of the characteristics of TaN/HfLaON/Hf(1-x-y)N(x)O(y)/ SiO(2)/Si MONOS memory devices. By increasing the N composition in the Hf(1-x-y)N(x)O(y) trapping layer, both the memory window And high-temperature retention improved. The Hf(0.3)N(0.2)O(0.5) MONOS device displayed good characteristics in terms of its +/-9-V program/erase (P/E) voltage, 100-mu s P/E speed, large initial 2.8-V memory window, and a ten-year extrapolated retention of 1.8 V at 85 degrees C or 1.5 V at 125 degrees C.
URI: http://dx.doi.org/10.1109/TED.2008.920973
http://hdl.handle.net/11536/8753
ISSN: 0018-9383
DOI: 10.1109/TED.2008.920973
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 55
Issue: 6
起始頁: 1417
結束頁: 1423
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