標題: Atomic scale characterization of buried In(x)Ga(1-x)As quantum dots using pulsed laser atom probe tomography
作者: Mueller, M.
Cerezo, A.
Smith, G. D. W.
Chang, L.
Gerstl, S. S. A.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 9-六月-2008
摘要: Atom probe tomography (APT) has been used to study In(x)Ga(1-x)As quantum dots buried in GaAs. The dots have an average base width of 16.1 +/- 1.1 nm and height of 3.5 +/- 0.3 nm, but a wide range of sizes. APT composition profiles across the dots are similar to a previous study by cross-sectional scanning transmission electron microscopy, but show significant gallium incorporation (average x=0.22 +/- 0.01). The direct three-dimensional nature of the APT data also reveals the complex spatial distribution of indium within the dots. Data such as these are vital for optimizing the performance of quantum dot materials and devices. (c) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2918846
http://hdl.handle.net/11536/8724
ISSN: 0003-6951
DOI: 10.1063/1.2918846
期刊: APPLIED PHYSICS LETTERS
Volume: 92
Issue: 23
結束頁: 
顯示於類別:期刊論文


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