標題: Enhanced electron emission from phosphorous- and boron-doped diamond-clad Si field emitter arrays
作者: Ku, TK
Chen, SH
Yang, CD
She, NJ
Tarntair, FG
Wang, CC
Chen, CF
Hsieh, IJ
Cheng, HC
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: diamond-clad silicon tips;field emission;field emitter arrays;effective work function
公開日期: 15-Dec-1996
摘要: A new fabrication technology of polycrystalline diamond-clad Si microtips using microwave plasma chemical vapor deposition (MPCVD) has been developed to improve the characteristics of electron field emission from the pure Si tips. A uniform and smooth coating morphology for the diamond-clad Si tips have been achieved. Electron emission currents of diamond-clad tips are much higher than those of pure Si tips. Such great improvement is attributed to the lowering of the effective work function in the diamond-clad tips. The effects of phosphorus- and boron-doped diamond-clad Si tips have been also studied in comparison with the undoped ones. The current-voltage characteristics of the undoped diamond-clad tips were further enhanced by the in-situ doping of phosphorus or boron due to a higher electron supplement. Moreover, the P-doped diamond-clad tips show a better field emission performance as compared to the B-doped ones. This difference is surmised to be associated with the higher electron conductivity and defect densities of P-doped diamond films.
URI: http://dx.doi.org/10.1016/S0040-6090(96)09068-2
http://hdl.handle.net/11536/871
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(96)09068-2
期刊: THIN SOLID FILMS
Volume: 290
Issue: 
起始頁: 176
結束頁: 180
Appears in Collections:Conferences Paper


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