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dc.contributor.authorYang, Chuan-Yien_US
dc.contributor.authorDhananjayen_US
dc.contributor.authorCheng, Shiau-Shinen_US
dc.contributor.authorOu, Chun-Weien_US
dc.contributor.authorChuang, You-Cheen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2014-12-08T15:11:21Z-
dc.date.available2014-12-08T15:11:21Z-
dc.date.issued2008-06-23en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2939553en_US
dc.identifier.urihttp://hdl.handle.net/11536/8707-
dc.description.abstractWe report an effective way to equilibrate hole and electron transport in ambipolar pentacene thin film transistors (TFTs). It was achieved by inserting an ultra thin lithium fluoride (LiF) layer at the electrode/organic interface to form a bifunctional source/drain electrode. It can be observed that the presence of ultrathin LiF layer will facilitate the injection of electrons from source/drain electrodes to organic semiconductor, resulting in a significant enhancement of the n-channel conduction, without sacrificing p-channel conduction for ambipolar pentacene TFTs. These factors make them potential candidates for the organic complementary circuits and inverter circuits of these ambipolar TFTs are also demonstrated. (c) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleBalancing the ambipolar conduction for pentacene thin film transistors through bifunctional electrodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2939553en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume92en_US
dc.citation.issue25en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000257231200076-
dc.citation.woscount8-
Appears in Collections:Articles


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