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dc.contributor.authorWei, C. C.en_US
dc.contributor.authorLiu, P. C.en_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorTu, K. N.en_US
dc.date.accessioned2014-12-08T15:11:17Z-
dc.date.available2014-12-08T15:11:17Z-
dc.date.issued2008-07-01en_US
dc.identifier.issn0884-2914en_US
dc.identifier.urihttp://dx.doi.org/10.1557/jmr.2008.0253en_US
dc.identifier.urihttp://hdl.handle.net/11536/8657-
dc.description.abstractElectromigration at 5 x 10(4) A/cm(2) and 100 degrees C was conducted to grow composite Pb/Sn whiskers from SnPb solders, in which a Pb whisker grows first and then a whisker of Sn grows. In some cases, small Sn islands are embedded in Pb whiskers. The diameter of a composite whisker is < 1 mu m, which is much smaller than that of spontaneous Sn whisker growth on leadframes. The growth orientation of Pb whiskers was in the [110], [111], and [112] directions. This investigation proposes that compressive stress generated by electromigration at the anode provides the force driving whisker growth. Therefore, accelerated tests of whisker growth at higher temperatures using electromigration are feasible.en_US
dc.language.isoen_USen_US
dc.titleElectromigration-induced Pb and Sn whisker growth in SnPb solder stripesen_US
dc.typeArticleen_US
dc.identifier.doi10.1557/jmr.2008.0253en_US
dc.identifier.journalJOURNAL OF MATERIALS RESEARCHen_US
dc.citation.volume23en_US
dc.citation.issue7en_US
dc.citation.spage2017en_US
dc.citation.epage2022en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000257409800027-
dc.citation.woscount4-
Appears in Collections:Articles