Title: Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN/AlN double-buffer layers
Authors: Li, Zhen-Yu
Lan, Shan-Ming
Uen, Wu-Yih
Chen, Ying-Ru
Chen, Meng-Chu
Huang, Yu-Hsiang
Ku, Chien-Te
Liao, Sen-Mao
Yang, Tsun-Neng
Wang, Shing-Chung
Chi, Gou-Chung
Department of Photonics
Issue Date: 1-Jul-2008
Abstract: Indium nitride (InN) epilayers have been successfully grown on Si (111) substrates with low-temperature (450 degrees C) grown InN and high-temperature (1050 degrees C) grown AlN (InN/AlN) double-buffer layers by atmospheric-pressure metal-organic chemical vapor deposition (AP-MOCVD). X-ray diffraction characterizations indicated that highly (0001)-oriented hexagonal InN was grown on Si (111) substrate. Photoluminescence (PL) analyses performed at room temperature showed a strong emission at 0.72 eV with a full width at half maximum of 121 meV. Excitation intensity dependent measurements demonstrated the PL mechanism to be the band-to-band transition. Time-resolved PL could be fitted by a single exponential exhibiting an ordered film and a recombination lifetime of around 0.85 ns. In particular, transmission electron microscopy characterizations indicated that the use of AlN first buffer is very important to achieve a structurally uniform (0001)-oriented InN epilayer on Si (111) by AP-MOCVD. (C) 2008 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.2929849
ISSN: 0734-2101
DOI: 10.1116/1.2929849
Volume: 26
Issue: 4
Begin Page: 587
End Page: 591
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