標題: Temperature-dependent capacitance characteristics of RF LDMOS transistors with different layout structures
作者: Hu, Hsin-Hui
Chen, Kun-Ming
Huang, Guo-Wei
Chen, Ming-Yi
Cheng, Eric
Yang, Yu-Chi
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: capacitance;drift region;laterally diffused MOS (LDMOS);layout structure;nonuniform doping;temperature
公開日期: 1-Jul-2008
摘要: In this letter, the capacitance characteristics of RF LDMOS transistors with different temperatures and layout structures were studied. In a conventional fishbone structure, the peaks in capacitances decrease with increasing temperature. For the ring structure, two peaks in a capacitance-voltage curve have been observed at high drain voltages due to the additional corner effect. in addition, peaks in gate-to-source/body capacitance decrease and peaks in gate-to-drain capacitance increase with increasing temperature at high drain voltages. By analyzing the effects of temperature on threshold voltage, quasi-saturation current, and drift depletion capacitance, the variations of capacitances with temperature were investigated.
URI: http://dx.doi.org/10.1109/LED.2008.2000648
http://hdl.handle.net/11536/8647
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2000648
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 7
起始頁: 784
結束頁: 787
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