標題: Impact of process-induced strain on Coulomb scattering mobility in short-channel n-MOSFETs
作者: Chen, William P. N.
Su, Pin
Goto, K.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: coulomb mobility;MOSFET;strained silicon
公開日期: 1-Jul-2008
摘要: This letter provides an experimental assessment of Coulomb scattering mobility for advanced short-channel strained devices. By accurate mobility extraction under various temperatures, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel nMOSFETs. This letter indicates that the Coulomb mobility has significant stress dependency. Moreover, the stress sensitivity of the Coulomb mobility shows strong temperature, dependence. Because it is the interface scattering that counteracts the stress sensitivity of the bulk-impurity-limited mobility, further reducing the interface charges will be crucial to future mobility scaling.
URI: http://dx.doi.org/10.1109/LED.2008.2000909
http://hdl.handle.net/11536/8646
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2000909
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 7
起始頁: 768
結束頁: 770
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