標題: Scanned probe oxidation on p-GaAs(100) surface with an atomic force microscopy
作者: Jian, Sheng-Rui
Juang, Jenh-Yih
電子物理學系
Department of Electrophysics
關鍵字: atomic force microscopy;p-GaAs(100);nanooxidation;multi-walled carbon nanotube;Auger electron spectroscopy
公開日期: 1-七月-2008
摘要: Locally anodic oxidation has been performed to fabricate the nanoscale oxide structures on p-GaAs(100) surface, by using an atomic force microscopy (AFM) with the conventional and carbon nanotube (CNT)-attached probes. The results can be utilized to fabricate the oxide nanodots under ambient conditions in noncontact mode. To investigate the conversion of GaAs to oxides, micro-Auger analysis was employed to analyze the chemical compositions. The growth kinetics and the associated mechanism of the oxide nanodots were studied under DC voltages. With the CNT-attached probe the initial growth rate of oxide nanodots is in the order of similar to 300 nm/s, which is similar to 15 times larger than that obtained by using the conventional one. The oxide nanodots cease to grow practically as the electric field strength is reduced to the threshold value of similar to 2 x 10(7) V cm(-1). In addition, results indicate that the height of oxide nanodots is significantly enhanced with an AC voltage for both types of probes. The influence of the AC voltages on controlling the dynamics of the AFM-induced nanooxidation is discussed.
URI: http://dx.doi.org/10.1007/s11671-008-9144-2
http://hdl.handle.net/11536/8641
ISSN: 1931-7573
DOI: 10.1007/s11671-008-9144-2
期刊: NANOSCALE RESEARCH LETTERS
Volume: 3
Issue: 7
起始頁: 249
結束頁: 254
顯示於類別:期刊論文


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