Title: GaN growth on Si(111) using simultaneous AlN/alpha-Si(3)N(4) buffer structure
Authors: Chang, Jet Rung
Yang, Tsung Hsi
Ku, Jui Tai
Shen, Shih Guo
Chen, Yi Cheng
Wong, Yuen Yee
Chang, Chun Yen
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
D Link NCTU Joint Res Ctr
Issue Date: 1-Jul-2008
Abstract: In this study, we examined the growth of a simultaneous AIN/alpha-Si(3)N(4) buffer layer for crack-free GaN growth oil a Si(111) substrate. The compressive stress in the AlN/alpha-Si(3)N(4)/Si(111) structure retards the cracking ill the GaN layer. It is demonstrated that the Al-preseeded layer is a critical factor for accornplishing AlN and the crystalline alpha-Si(3)N(4) layer simultaneously. The effect of Al layer deposition time on the c-axis lattice constants of the subsequent AlN layer, and the effect of the crystalline alpha-Si(3)N(4) layer oil GaN quality were investigated by X-ray diffraction analysis. The 1 : 2 lattice coincidently matches at the alpha-Si(3)N(4)(0001)/Si(111) interface, and the 5 : 2 coincident lattice interface at AlN(0001)/alpha-Si(3)N(4)(0001) reduces the lattice mismatch in the AIN/alpha Si(3)N(4)/Si(111) structure. The 5 : 4 coincident lattice in the AIN/alpha-Si(3)N(4)/Si(111) structure is related to the reduction in the tensile stress in the AIN epilayers. The thickness of crack-free GaN is 2.00 mu m. The full widths at half-maximum (FWHM) of the X-ray rocking curve and neutral-donor-bound exciton (D degrees X) are 1012arcsec and 5.90meV, respectively.
URI: http://dx.doi.org/10.1143/JJAP.47.5572
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.5572
Volume: 47
Issue: 7
Begin Page: 5572
End Page: 5575
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