標題: Effect of process variation on field emission characteristics in surface-conduction electron emitters
作者: Lo, Hsiang-Yu
Li, Yiming
Tsai, Chih-Hao
Chao, Hsueh-Yung (Robert)
Pan, Fu-Ming
材料科學與工程學系
電信工程研究所
Department of Materials Science and Engineering
Institute of Communications Engineering
關鍵字: angle of inclination of surface;field emission;hydrogen plasma;Maxwell equations;nanogap;Pd;particle-in-cell (PIC) simulation;process variations;shape;surface-conduction electron emitters (SCEs);thin-film emitter;turn-on voltage
公開日期: 1-七月-2008
摘要: In this paper, we explore the effect of process variation on field emission characteristics in surface-conduction electron emitters. The structure of Pd thin-film emitter is fabricated on the substrate and the nanometer scale gap is formed by the focused ion beam technique. Different shapes of nanogaps due to the process variations are investigated by the experiment and three-dimensional Maxwell particle-in-cell simulation. Four deformation structures are examined, and it is found that the type I exhibits high emission efficiency due to a stronger electric field around the apex and larger emission current among structures. The electron emission current is dependent upon the angle of inclination of surface. Hydrogen plasma treatment is also used to increase the edge roughness of the nanogap and thereby dramatically improve the field emission characteristics. For the nanogap with a separation of 90 nm, the turn-on voltage significantly reduces from 60 to 20 V after the hydrogen plasma treatment.
URI: http://dx.doi.org/10.1109/TNANO.2008.926347
http://hdl.handle.net/11536/8598
ISSN: 1536-125X
DOI: 10.1109/TNANO.2008.926347
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 7
Issue: 4
起始頁: 434
結束頁: 439
顯示於類別:期刊論文


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  1. 000258766300009.pdf