標題: Characterization of negative-type photoresists containing polyhedral oligomeric silsesquioxane methacrylate
作者: Lin, Ho-May
Hseih, Kuo-Hung
Chang, Feng-Chih
應用化學系
Department of Applied Chemistry
關鍵字: polyhedral oligomeric silsesquioxanes;POSS;negative-type photoresist;hydrogen bonding
公開日期: 1-七月-2008
摘要: A series of negative-type photoresists made by blending with various contents of polyhedral oligomeric silsesquioxane (POSS) methacrylate were prepared and characterized. These POSS macromers tend to crystallize or aggregate to form their own domains within the photoresist matrix. Sensitivity of the POSS modified photoresist is significantly improved with the increase of the POSS content. Results from photo-DSC analyses indicate that both induction time and peak maximum of heat flux are reduced by blending with POSS macromer. Addition of the proper amount (<13 wt%) of POSS can effectively increase photo-polymerization rate and exothermic heat. Hydrogen bonding interaction between the hydroxyl of photoresist and the siloxane of POSS tends to attract methacrylate double bonds surrounding POSS particles locally and thus enhances the rate of photo-polymerization and sensitivity. (C) 2008 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2008.03.012
http://hdl.handle.net/11536/8591
ISSN: 0167-9317
DOI: 10.1016/j.mee.2008.03.012
期刊: MICROELECTRONIC ENGINEERING
Volume: 85
Issue: 7
起始頁: 1624
結束頁: 1628
顯示於類別:期刊論文


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  1. 000258159900025.pdf