標題: Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots
作者: Chen, J. F.
Chiang, C. H.
Wu, Y. H.
Chang, L.
Chi, J. Y.
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
公開日期: 15-七月-2008
摘要: This work investigates the surfactant effect on exposed and buried InAs quantum dots (QDs) by incorporating Sb into the QD layers with various Sb beam equivalent pressures (BEPs). Secondary ion mass spectroscopy shows the presence of Sb in the exposed and buried QD layers with the Sb intensity in the exposed layer substantially exceeding that in the buried layer. Incorporating Sb can reduce the density of the exposed QDs by more than two orders of magnitude. However, a high Sb BEP yields a surface morphology with a regular periodic structure of ellipsoid terraces. A good room-temperature photoluminescence (PL) at similar to 1600 nm from the exposed QDs is observed, suggesting that the Sb incorporation probably improves the emission efficiency by reducing the surface recombination velocity at the surface of the exposed QDs. Increasing Sb BEP causes a blueshift of the emission from the exposed QDs due to a reduction in the dot height as suggested by atomic force microscopy. Increasing Sb BEP can also blueshift the similar to 1300 nm emission from the buried QDs by decreasing the dot height. However, a high Sb BEP yields a quantum well-like PL feature formed by the clustering of the buried QDs into an undulated planar layer. These results indicate a marked Sb surfactant effect that can be used to control the density, shape, and luminescence of the exposed and buried QDs. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2959598
http://hdl.handle.net/11536/8577
ISSN: 0021-8979
DOI: 10.1063/1.2959598
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 104
Issue: 2
結束頁: 
顯示於類別:期刊論文


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