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dc.contributor.authorLin, Chi-Yuanen_US
dc.contributor.authorChang, Chung-Shunen_US
dc.contributor.authorChien, Forest S. -S.en_US
dc.date.accessioned2014-12-08T15:11:11Z-
dc.date.available2014-12-08T15:11:11Z-
dc.date.issued2010-07-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2010.2370en_US
dc.identifier.urihttp://hdl.handle.net/11536/8567-
dc.description.abstractNi-Si nano Schottky junctions are fabricated by the combined process of scanning probe lithography and electrodeposition. The Si(3)N(4) film was patterned by probe-induced oxidation and became a mask for selective electrodeposition of Ni on p-Si substrate. The Ni pattern consists of Ni nano dots, whose diameter is less then 60 nm. The composition and ferromagnetism of Ni dots are verified by energy dispersive spectrum and magnetic force microscopy. The schottky barrier of Ni-Si nano contact is 0.52 V determined by the I-V measurement of conducting atomic force microscopy (CAFM). From current mapping images, it shows that chemical impurity at the Ni-Si interfaces can result in the poor conductance of the junctions.en_US
dc.language.isoen_USen_US
dc.titleFabrication of Ni Nanostructures on p-Si by Scanning Probe Lithography on Si(3)N(4) Films and Selective Electrodepositionen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1166/jnn.2010.2370en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume10en_US
dc.citation.issue7en_US
dc.citation.spage4454en_US
dc.citation.epage4458en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
Appears in Collections:Conferences Paper