|標題:||Ambipolar transport behavior in In(2)O(3)/pentacene hybrid heterostructure and their complementary circuits|
Department of Photonics
|摘要:||In this Letter, ambipolar transport properties of a bilayer of In(2)O(3) and a pentacene heterostructure have been realized. While In(2)O(3) thin film transistors exhibited a n-channel behavior, pentacene presumed p-channel characteristics on bare SiO(2)/p-Si substrates. However, when a bilayer of In(2)O(3)/pentacene was realized on the gate dielectrics, the hybrid structure exhibited both n- and p-channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits. (C) 2008 American Institute of Physics.|
|期刊:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
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