標題: Carrier dynamics of type-II InAs/GaAs quantum dots covered by a thin GaAs(1-x)Sb(x) layer
作者: Chang, Wen-Hao
Liao, Yu-An
Hsu, Wei-Ting
Lee, Ming-Chih
Chiu, Pei-Chin
Chyi, Jen-Inn
電子物理學系
Department of Electrophysics
公開日期: 21-七月-2008
摘要: Carrier dynamics of InAs/GaAs quantum dots (QDs) covered by a thin GaAs(1-x)Sb(x) layer were investigated by time-resolved photoluminescence (PL). Both the power dependence of PL peak shift and the long decay time constants confirm the type-II band alignment at the GaAsSb-InAs interface. Different recombination paths have been clarified by temperature dependent measurements. At lower temperatures, the long-range recombination between the QD electrons and the holes trapped by localized states in the GaAsSb layer is important, resulting in a non-single-exponential decay. At higher temperatures, optical transitions are dominated by the short-range recombination with the holes confined to the band-bending region surrounding the QDs. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2964191
http://hdl.handle.net/11536/8560
ISSN: 0003-6951
DOI: 10.1063/1.2964191
期刊: APPLIED PHYSICS LETTERS
Volume: 93
Issue: 3
結束頁: 
顯示於類別:期刊論文


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