標題: The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidation
作者: Chang, KM
Li, CH
Fahn, FJ
Tsai, JY
Yeh, TH
Wang, SW
Yang, JY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-1997
摘要: The influence of the precleaning process on the characteristics of SiO2 film grown by using electron cyclotron resonance (ECR) plasma oxidation at room temperature is presented in this work. We find that the growth rate, electrical properties, and reliability of the ECR plasma grown oxide is improved by this precleaning step. Two growth mechanisms are found which determine the electrical properties of the plasma grown oxide. The plasma damage is also discussed. We find that plasma oxidation produces little plasma damage in our experiments. Excellent ECR plasma grown silicon dioxide with good electrical properties and reliability characteristics are obtained by this precleaning technique.
URI: http://hdl.handle.net/11536/856
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 144
Issue: 1
起始頁: 311
結束頁: 314
顯示於類別:期刊論文


文件中的檔案:

  1. A1997WG07000050.pdf