標題: Novel gate-all-around poly-Si TFTs with multiple nanowire channels
作者: Liao, Ta-Chuan
Tu, Shih-Wei
Yu, Ming H.
Lin, Wei-Kai
Liu, Cheng-Chin
Chang, Kuo-Jui
Tai, Ya-Hsiang
Cheng, Huang-Chung
電子工程學系及電子研究所
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Institute of Display
關鍵字: gate-all-around (GAA);nanowire;poly-Si;thin-film transistors (TFTs);three-dimensional (3-D) device
公開日期: 1-Aug-2008
摘要: The novel gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with multiple nanowire channels (MNCs) have been, for the first time, fabricated using a simple process to demonstrate high-performance electrical characteristics and high immunity to short-channel effects (SCEs). The nanowire channel with high body-thickness-to-width ratio (T(Fin)/W(Fin)), which is approximately equal to one, was realized only with a sidewall-spacer formation. Moreover, the unique suspending MNCs were also achieved to build the GAA structure. The resultant GAA-MNC TFTs showed outstanding three-dimensional (3-D) gate controllability and excellent electrical characteristics, which revealed a high on/off current ratio (> 10(8)), a low threshold voltage, a steep subthreshold swing, a near-free drain-induced barrier lowering, as well as an excellent SCE suppression. Therefore, such high-performance GAA-MNC TFTs are very suitable for applications in system-on-panel and 3-D circuits.
URI: http://dx.doi.org/10.1109/LED.2008.2001176
http://hdl.handle.net/11536/8517
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2001176
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 8
起始頁: 889
結束頁: 891
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