標題: Low-capacitance and fast turn-on SCR for RF ESD protection
作者: Lin, Chun-Yu
Ker, Ming-Dou
Meng, Guo-Xuan
電機學院
College of Electrical and Computer Engineering
關鍵字: electrostatic discharge (ESD);low capacitance (low-C);power amplifier (PA);radio-frequency (RF);silicon-controlled rectifier (SCR);waffle layout
公開日期: 1-八月-2008
摘要: With the smaller layout area and parasitic capacitance under the same electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in radio-frequency (RF) IC. In this paper, SCR's with the waffle layout structures are studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the reduced parasitic capacitance and capacitance variation, the degradation on UWB RF circuit performance can be minimized. Besides, the fast turn-on design on the low-capacitance SCR without increasing the I/O loading capacitance is investigated and applied to an UWB RF power amplifier (PA). The PA co-designed with SCR in the waffle layout structure has been fabricated. Before ESD stress, the RF performances of the ESD-protected PA are as well as that of the unprotected PA. After ESD stress, the unprotected PA is seriously degraded, whereas the ESD-protected PA still keeps the performances well.
URI: http://dx.doi.org/10.1093/ietele/e91-c.8.1321
http://hdl.handle.net/11536/8482
ISSN: 0916-8524
DOI: 10.1093/ietele/e91-c.8.1321
期刊: IEICE TRANSACTIONS ON ELECTRONICS
Volume: E91C
Issue: 8
起始頁: 1321
結束頁: 1330
顯示於類別:期刊論文


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  1. 000258394700025.pdf