標題: Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications
作者: Tsai, Chih-Tsung
Chang, Ting-Chang
Liu, Po-Tsun
Cheng, Yi-Li
Huang, Fon-Shan
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 4-Aug-2008
摘要: In this work, the supercritical CO(2) fluid mixed with cosolvents is introduced to terminate the traps in electron-gun (e-gun) evaporation deposited silicon oxide (SiO(x)) film at 150 degrees C. After the proposed treatment, the SiO(x) film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 10(2) times and the retention time attains to 2x10(3) s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2957655
http://hdl.handle.net/11536/8477
ISSN: 0003-6951
DOI: 10.1063/1.2957655
期刊: APPLIED PHYSICS LETTERS
Volume: 93
Issue: 5
結束頁: 
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