標題: Two-dimensional dopant profiling by electrostatic force microscopy using carbon nanotube modified cantilevers
作者: Chin, Shu-Cheng
Chang, Yuan-Chih
Hsu, Chen-Chih
Lin, Wei-Hsiang
Wu, Chih-I
Chang, Chia-Seng
Tsong, Tien T.
Woon, Wei-Yen
Lin, Li-Te
Tao, Hun-Jan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 13-Aug-2008
摘要: A two-dimensional (2D) dopant profiling technique is demonstrated in this work. We apply a unique cantilever probe in electrostatic force microscopy (EFM) modified by the attachment of a multiwalled carbon nanotube (MWNT). Furthermore, the tip apex of the MWNT was trimmed to the sharpness of a single-walled carbon nanotube (SWNT). This ultra-sharp MWNT tip helps us to resolve dopant features to within 10 nm in air, which approaches the resolution achieved by ultra-high vacuum scanning tunnelling microscopy (UHV STM). In this study, the CNT-probed EFM is used to profile 2D buried dopant distribution under a nano-scale device structure and shows the feasibility of device characterization for sub-45 nm complementary metal-oxide-semiconductor (CMOS) field-effect transistors.
URI: http://dx.doi.org/10.1088/0957-4484/19/32/325703
http://hdl.handle.net/11536/8470
ISSN: 0957-4484
DOI: 10.1088/0957-4484/19/32/325703
期刊: NANOTECHNOLOGY
Volume: 19
Issue: 32
結束頁: 
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