標題: Method for extracting gate-voltage-dependent source injection resistance of modified Schottky barrier (MSB) MOSFETs
作者: Tsui, Bing-Yue
Lu, Chi-Pei
Liu, Hsiao-Han
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: carrier injection;implantation-to-silicide (ITS);modified Schottky barrier (MSB);multigate FET (MuGFET)
公開日期: 1-九月-2008
摘要: The modified Schottky barrier (MSB) MOSFET with low-resistance metal source/drain and good short-channel effect immunity is one of the promising nanoscale device structures. In this letter, a modified external load resistance method was proposed to extract the bias-dependent source injection resistance of the MSB MOSFET for the first time. The effect of the thermal budget of the MSB process on the source injection resistance is reported. The injection resistance is exponentially proportional to (V-GS-V-th-0.5V(DS)) and would, be close to the source/drain resistance of conventional MOSFETs at high gate bias. This work provides a good method to directly evaluate the efficiency of the MSB junction.
URI: http://dx.doi.org/10.1109/LED.2008.2001478
http://hdl.handle.net/11536/8431
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2001478
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 9
起始頁: 1053
結束頁: 1055
顯示於類別:期刊論文