標題: The channel length extension in poly-Si TFTs with LDD structure
作者: Zan, Hsiao-Wen
Wang, Kuang-Ming
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: effective channel length;lightly doped drain (LDD);parasitic resistance;polycrystalline-silicon thin-film transistor (poly-Si TFT)
公開日期: 1-Sep-2008
摘要: In this letter, the resistance of the lightly doped drain (LDD) region in n-channel polycrystalline-silicon thin-film transistors (poly-Si TFTs) was analyzed. It was found that the LDD resistance was composed of an LDD-length-dependent part and a gate-bias-dominant part. The latter was located next to the gate edge and was governed by the channel extension phenomenon with an extended length of around 0.55 mu m under a 10-V gate bias. The current density distribution simulated by Silvaco ATLAS supported this severe fringing field effect. The influences of the gate bias, LDD doping level, gate oxide thickness, and LDD length on the channel extension are also investigated with Silvaco ATLAS simulation. This letter is the first report of long channel extensions in the LDD region of poly-Si TFTs. The result may significantly influence the device model in the short channel regime.
URI: http://dx.doi.org/10.1109/LED.2008.2001396
http://hdl.handle.net/11536/8405
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2001396
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 9
起始頁: 1034
結束頁: 1036
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