標題: Comparison of wideband Gilbert micromixers using SiGe HBT and GaInP/GaAs HBT technologies
作者: Syu, Jin-Siang
Meng, Chinchun
Wu, Chih-Kai
Huang, Guo-Wei
電信工程研究所
Institute of Communications Engineering
關鍵字: SiGe;GaInP/GaAs;heterojunction bipolar transistor (HBT);micromixer;shunt-shunt feedback;CE-CC
公開日期: 1-九月-2008
摘要: Wideband downconversion mixers are demonstrated by using both 0.35-mu m SiGe heterojunction bipolar transistor (HBT) and 2-mu m GaInP/GaAs HBT technologies. A micromixer topology is implemented in the RF port while a differential type shunt-shunt feedback amplifier and a differential-to-single CE-CC output buffer are used in the IF stage. The frequency response analysis and systematic measurement approach for a wideband Gilbert mixer are proposed in this article for each individual stage of local frequency (LO), radio frequency (RF), and intermediate frequency (IF). The differential LO signals are generated by several off-chip 180 degrees hybrids to cover more than 8:1 bandwidth. The SiGe HBT Micromixer achieves the conversion gain of 6 dB, IP(IdB) of -17.5 dBm, and IIP(3) of - 7 dBm with the 3.3-V supply voltage and the power consumption of 37.5 mW. On the other hand, the GaInP/GaAs HBT Micromixer achieves the conversion gain of 25 dB, IP(IdB) of -25 dBm, and IIP(3) of - 15 dBm with the 5-V supply voltage and the power consumption of 50 mW. (c) 2008 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.23642
http://hdl.handle.net/11536/8393
ISSN: 0895-2477
DOI: 10.1002/mop.23642
期刊: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 50
Issue: 9
起始頁: 2254
結束頁: 2257
顯示於類別:期刊論文