標題: Material and optical properties of trenched epitaxial lateral overgrowth of a-plane GaN
作者: Wang, Te-Chung
Lu, Tien-Chang
Ko, Tsung-Shine
Kuo, Hao-Chung
Chen, Hou-Guang
Yu, Min
Chu, Chang-Cheng
Lee, Zheng-Hong
Wang, Sing-Chung
光電工程學系
Department of Photonics
公開日期: 2007
摘要: The crystal quality of a-plane GaN film was successfully improved by using trenched epitaxial lateral overgrowth (TELOG) of a-plane GaN. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using TELOG. The low threading dislocation density investigated by transmission electron microscopy was estimated to be 3 x 10(7) cm(-2) on the N-face GaN wing. According the results of mu-PL and CL, the threading dislocations are the strongly non-radiative center in a-plane GaN film. Finally, we concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film.
URI: http://hdl.handle.net/11536/8390
http://dx.doi.org/10.1002/pssc.200674765
ISSN: 1610-1634
DOI: 10.1002/pssc.200674765
期刊: Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4 No 7 2007
Volume: 4
Issue: 7
起始頁: 2519
結束頁: 2523
Appears in Collections:Conferences Paper


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