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dc.contributor.authorYang, Ping-Fengen_US
dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorLai, Yi-Shaoen_US
dc.contributor.authorYang, Chu-Shouen_US
dc.contributor.authorChen, Rong-Shengen_US
dc.date.accessioned2014-12-08T15:10:56Z-
dc.date.available2014-12-08T15:10:56Z-
dc.date.issued2008-09-08en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2007.09.140en_US
dc.identifier.urihttp://hdl.handle.net/11536/8364-
dc.description.abstractPresented in this study are surface roughness, crystalline structure, and nanomechanical properties of InGaN thin films deposited under various growth temperatures, obtained by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and nanoindentation techniques. The InGaN thin films with different In contents were deposited on sapphire substrates through a metal-organic chemical-vapor deposition (MOCVD) system. Changes in mechanical properties for InGaN thin films are discussed in conjunction with deposition temperature, surface morphology and crystalline structure. The XRD measurements showed that there was no phase separation of In as the In composition went from 25 at.% to 34 at.%. Moreover, both XRD and AFM showed larger grain and surface roughness in In0.25Ga0.75N thin films. Nanoindentation results indicate that hardness and Young's modulus both decreased as the indentation depth increased. The contact stress-strain relationships were also analyzed. (C) 2007 Elsevier B.V. All fights reserved.en_US
dc.language.isoen_USen_US
dc.subjectInGaNen_US
dc.subjectMOCVDen_US
dc.subjectXRDen_US
dc.subjectAFMen_US
dc.subjectnanoindentationen_US
dc.titleMorphological, structural, and mechanical characterizations of InGaN thin films deposited by MOCVDen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jallcom.2007.09.140en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume463en_US
dc.citation.issue1-2en_US
dc.citation.spage533en_US
dc.citation.epage538en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000258697300095-
dc.citation.woscount10-
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