標題: Morphological, structural, and mechanical characterizations of InGaN thin films deposited by MOCVD
作者: Yang, Ping-Feng
Jian, Sheng-Rui
Lai, Yi-Shao
Yang, Chu-Shou
Chen, Rong-Sheng
電子物理學系
Department of Electrophysics
關鍵字: InGaN;MOCVD;XRD;AFM;nanoindentation
公開日期: 8-Sep-2008
摘要: Presented in this study are surface roughness, crystalline structure, and nanomechanical properties of InGaN thin films deposited under various growth temperatures, obtained by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and nanoindentation techniques. The InGaN thin films with different In contents were deposited on sapphire substrates through a metal-organic chemical-vapor deposition (MOCVD) system. Changes in mechanical properties for InGaN thin films are discussed in conjunction with deposition temperature, surface morphology and crystalline structure. The XRD measurements showed that there was no phase separation of In as the In composition went from 25 at.% to 34 at.%. Moreover, both XRD and AFM showed larger grain and surface roughness in In0.25Ga0.75N thin films. Nanoindentation results indicate that hardness and Young's modulus both decreased as the indentation depth increased. The contact stress-strain relationships were also analyzed. (C) 2007 Elsevier B.V. All fights reserved.
URI: http://dx.doi.org/10.1016/j.jallcom.2007.09.140
http://hdl.handle.net/11536/8364
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2007.09.140
期刊: JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 463
Issue: 1-2
起始頁: 533
結束頁: 538
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