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dc.contributor.authorLin, Yong-Hanen_US
dc.contributor.authorChiu, Shao-Pinen_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2014-12-08T15:10:55Z-
dc.date.available2014-12-08T15:10:55Z-
dc.date.issued2008-09-10en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/19/36/365201en_US
dc.identifier.urihttp://hdl.handle.net/11536/8358-
dc.description.abstractThe temperature behavior of how electrons propagate through an insulating electronic contact formed at the interface between a submicron Cr/Au electrode and a metallic RuO(2) nanowire (NW) has been studied between 300 and 1 K. The NWs are typically of similar to 70 nm in diameter and a few microns long. The submicron electrodes were fabricated by the standard electron-beam lithography technique. By employing the two-probe method, the electronic contact resistances, R(c)(T), have been determined. We found that, in general, Rc increases rapidly with decreasing temperature but eventually saturates at liquid-helium temperatures. Such a temperature behavior can be well described by a thermal fluctuation-induced tunneling (FIT) conduction process which considers the crossover feature from thermal activation conduction at high temperatures to simple elastic tunneling conduction at low temperatures. The wide applicability of this FIT model has further been established by employing metallic IrO(2) and Sn-doped In(2)O(3-x) NWs. This work demonstrates that the underlying physics for the charge transport properties of an insulating electronic contact can be well understood.en_US
dc.language.isoen_USen_US
dc.titleThermal fluctuation-induced tunneling conduction through metal nanowire contactsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/19/36/365201en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume19en_US
dc.citation.issue36en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000258021700001-
dc.citation.woscount27-
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