標題: Thermal fluctuation-induced tunneling conduction through metal nanowire contacts
作者: Lin, Yong-Han
Chiu, Shao-Pin
Lin, Juhn-Jong
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 10-九月-2008
摘要: The temperature behavior of how electrons propagate through an insulating electronic contact formed at the interface between a submicron Cr/Au electrode and a metallic RuO(2) nanowire (NW) has been studied between 300 and 1 K. The NWs are typically of similar to 70 nm in diameter and a few microns long. The submicron electrodes were fabricated by the standard electron-beam lithography technique. By employing the two-probe method, the electronic contact resistances, R(c)(T), have been determined. We found that, in general, Rc increases rapidly with decreasing temperature but eventually saturates at liquid-helium temperatures. Such a temperature behavior can be well described by a thermal fluctuation-induced tunneling (FIT) conduction process which considers the crossover feature from thermal activation conduction at high temperatures to simple elastic tunneling conduction at low temperatures. The wide applicability of this FIT model has further been established by employing metallic IrO(2) and Sn-doped In(2)O(3-x) NWs. This work demonstrates that the underlying physics for the charge transport properties of an insulating electronic contact can be well understood.
URI: http://dx.doi.org/10.1088/0957-4484/19/36/365201
http://hdl.handle.net/11536/8358
ISSN: 0957-4484
DOI: 10.1088/0957-4484/19/36/365201
期刊: NANOTECHNOLOGY
Volume: 19
Issue: 36
結束頁: 
顯示於類別:期刊論文


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