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dc.contributor.authorWu, SLen_US
dc.contributor.authorChen, CYen_US
dc.contributor.authorLin, TYen_US
dc.contributor.authorLee, CLen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorLiang, MSen_US
dc.date.accessioned2014-12-08T15:02:08Z-
dc.date.available2014-12-08T15:02:08Z-
dc.date.issued1997-01-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.554805en_US
dc.identifier.urihttp://hdl.handle.net/11536/831-
dc.description.abstractThe polarity asymmetry on the electrical characteristics of the oxides grown on n(+) polysilicon (polyoxides) was investigated in terms of the oxidation process, the doping level of the lower polysilicon layer, the oxidation temperature and the oxide thickness, It was found that the thin polyoxide prepared by using a low-temperature wafer loading and N-2 preannealing process, has a smoother polyoxide/polysilicon interface and exhibits a lower oxide tunneling current, a higher dielectric breakdown field when the top electrode is positively biased, a lower electron trapping rate and a larger charge-to-breakdown than does the normal polyoxide. The polarity asymmetry is also strongly dependent on the doping level of the lower polysilicon layer, the oxidation temperature and the oxide thickness. It was found that only the thinner polyoxides (less than or equal to 240 Angstrom) grown on the heavily-doped polysilicon film (30 Ohm/sq) by using the higher-temperature oxidation process (greater than or equal to 950 degrees C) conduct a less oxide tunneling current when the top electrode is positively biased.en_US
dc.language.isoen_USen_US
dc.titleInvestigation of the polarity asymmetry on the electrical characteristics of thin polyoxides grown on N+ polysiliconen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.554805en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume44en_US
dc.citation.issue1en_US
dc.citation.spage153en_US
dc.citation.epage159en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997VY96800022-
dc.citation.woscount19-
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