標題: Investigation of the polarity asymmetry on the electrical characteristics of thin polyoxides grown on N+ polysilicon
作者: Wu, SL
Chen, CY
Lin, TY
Lee, CL
Lei, TF
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-1997
摘要: The polarity asymmetry on the electrical characteristics of the oxides grown on n(+) polysilicon (polyoxides) was investigated in terms of the oxidation process, the doping level of the lower polysilicon layer, the oxidation temperature and the oxide thickness, It was found that the thin polyoxide prepared by using a low-temperature wafer loading and N-2 preannealing process, has a smoother polyoxide/polysilicon interface and exhibits a lower oxide tunneling current, a higher dielectric breakdown field when the top electrode is positively biased, a lower electron trapping rate and a larger charge-to-breakdown than does the normal polyoxide. The polarity asymmetry is also strongly dependent on the doping level of the lower polysilicon layer, the oxidation temperature and the oxide thickness. It was found that only the thinner polyoxides (less than or equal to 240 Angstrom) grown on the heavily-doped polysilicon film (30 Ohm/sq) by using the higher-temperature oxidation process (greater than or equal to 950 degrees C) conduct a less oxide tunneling current when the top electrode is positively biased.
URI: http://dx.doi.org/10.1109/16.554805
http://hdl.handle.net/11536/831
ISSN: 0018-9383
DOI: 10.1109/16.554805
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 44
Issue: 1
起始頁: 153
結束頁: 159
顯示於類別:期刊論文


文件中的檔案:

  1. A1997VY96800022.pdf