Title: High-program/erase-speed SONOS with in situ silicon nanocrystals
Authors: Chiang, Tsung-Yu
Chao, Tien-Sheng
Wu, Yi-Hong
Yang, Wen-Luh
電子物理學系
Department of Electrophysics
Keywords: memory window;nonvolatile memory;retention time;silicon nanocrystals (Si-NC)
Issue Date: 1-Oct-2008
Abstract: In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (> 5.5 V), lower operation voltage, high P/E speed, and longer retention time (> 10(8) s for 13% charge loss).
URI: http://dx.doi.org/10.1109/LED.2008.2002944
http://hdl.handle.net/11536/8305
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2002944
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 10
Begin Page: 1148
End Page: 1151
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