Full metadata record
DC FieldValueLanguage
dc.contributor.authorYang, Feng-Yuen_US
dc.contributor.authorChang, Kuo-Juien_US
dc.contributor.authorHsu, Meei-Yuen_US
dc.contributor.authorLiu, Cheng-Chinen_US
dc.date.accessioned2014-12-08T15:10:48Z-
dc.date.available2014-12-08T15:10:48Z-
dc.date.issued2008-10-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2008.06.002en_US
dc.identifier.urihttp://hdl.handle.net/11536/8267-
dc.description.abstractWe have successfully demonstrated a polymeric semiconductor-based transistor with low-k polymer/high-k metal-oxide (TiO2) bilayer as gate dielectric. The TiO2 layers are readily processable from solution and cured at low temperature, instead of traditionally sputtering or high temperature sintering process, thus may suitable for a low-cost organic field effect transistors (FETs) manufacture. The low-k polymer capped on TiO2 layer could further smooth the TiO2 dielectric surface and suppress the leakage current from grain boundary of TiO2 films. The resulting unpatented P3HT-OFETs could operate with supply voltage less than 10 V and the mobility and threshold voltage were 0.0140 cm(2)/V s and 1.14 V, respectively. The on/off ratio was 1.0 x 10(3). (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectnanoparticleen_US
dc.subjectdielectricen_US
dc.subjectorganicen_US
dc.subjectfield-effect transistoren_US
dc.titleLow-operating-voltage polymeric transistor with solution-processed low-k polymer/high-k metal-oxide bilayer insulatorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2008.06.002en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume9en_US
dc.citation.issue5en_US
dc.citation.spage925en_US
dc.citation.epage929en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000259133500058-
dc.citation.woscount9-
Appears in Collections:Articles


Files in This Item:

  1. 000259133500058.pdf