標題: Low-operating-voltage polymeric transistor with solution-processed low-k polymer/high-k metal-oxide bilayer insulators
作者: Yang, Feng-Yu
Chang, Kuo-Jui
Hsu, Meei-Yu
Liu, Cheng-Chin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nanoparticle;dielectric;organic;field-effect transistor
公開日期: 1-Oct-2008
摘要: We have successfully demonstrated a polymeric semiconductor-based transistor with low-k polymer/high-k metal-oxide (TiO2) bilayer as gate dielectric. The TiO2 layers are readily processable from solution and cured at low temperature, instead of traditionally sputtering or high temperature sintering process, thus may suitable for a low-cost organic field effect transistors (FETs) manufacture. The low-k polymer capped on TiO2 layer could further smooth the TiO2 dielectric surface and suppress the leakage current from grain boundary of TiO2 films. The resulting unpatented P3HT-OFETs could operate with supply voltage less than 10 V and the mobility and threshold voltage were 0.0140 cm(2)/V s and 1.14 V, respectively. The on/off ratio was 1.0 x 10(3). (C) 2008 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2008.06.002
http://hdl.handle.net/11536/8267
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2008.06.002
期刊: ORGANIC ELECTRONICS
Volume: 9
Issue: 5
起始頁: 925
結束頁: 929
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