|標題:||Influence of Zn/O flux ratio and Mn-doped ZnO buffer on the plasma-assisted molecular beam epitaxy of ZnO on c-plane sapphire|
|作者:||Wang, J. S.|
Yang, C. S.
Liou, M. J.
Wu, C. X.
Chiu, K. C.
Chou, W. C.
Department of Electrophysics
|關鍵字:||Characterization;Reflection high-energy electron diffraction;Molecular beam epitaxy;Oxides;Zinc compounds;Semiconducting II-VI materials|
|摘要:||This work investigated the influence of Zn/O flux ratio and Mn-doped ZnO buffer layer on the epitaxial growth of ZnO grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Atomic force microscopy (AFM), photoluminescence (PL) and X-ray diffraction (XRD) measurements indicated that a small amount residual strain of ZnO epilayers was further relaxed under stoichiometric growth conditions due to the better surface migration of the adatoms. Moreover, we observed that a small amount of Mn doping led to obtain a flatter surface with stronger lattice relaxation maybe due to the greatly enhanced surface migration of the adatoms. By adding a Mn-doped ZnO buffer layer the optical and electrical properties of the ZnO epilayers had significant improvement. (c) 2008 Elsevier B.V. All rights reserved.|
|期刊:||JOURNAL OF CRYSTAL GROWTH|
|Appears in Collections:||Articles|
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