標題: Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition
作者: Ko, T. S.
Lu, T. C.
Wang, T. C.
Chen, J. R.
Gao, R. C.
Lo, M. H.
Kuo, H. C.
Wang, S. C.
Shen, J. L.
光電工程學系
Department of Photonics
公開日期: 1-Nov-2008
摘要: a-plane InGaN/GaN multiple quantum wells of different widths ranging from 3 to 12 nm grown on r-plane sapphire by metal-organic chemical vapor deposition were investigated. The peak emission intensity of the photoluminescence (PL) reveals a decreasing trend as the well width increases from 3 to 12 nm. Low temperature (9 K) time-resolved PL (TRPL) study shows that the sample with 3-nm-thick wells has the best optical property with a fastest exciton decay time of 0.57 ns. The results of cathodoluminescence and micro-PL scanning images for samples of different well widths further verify that the more uniform and stronger luminescence intensity distribution are observed for the samples of thinner quantum wells. In addition, more effective capturing of excitons due to larger localization energy E(loc) and shorter radiative lifetime of localized excitons are observed in thinner well width samples in the temperature dependent TRPL. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.3013435]
URI: http://dx.doi.org/10.1063/1.3013435
http://hdl.handle.net/11536/8214
ISSN: 0021-8979
DOI: 10.1063/1.3013435
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 104
Issue: 9
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000260941700007.pdf