標題: Impacts of N-2 and NH3 Plasma Surface Treatments on High-Performance LTPS-TFT With High-kappa Gate Dielectric
作者: Ma, Ming-Wen
Chao, Tien-Sheng
Chiang, Tsung-Yu
Wu, Woei-Cherng
Lei, Tan-Fu
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: High-kappa;low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs);NH3 plasma;N-2 plasma
公開日期: 1-Nov-2008
摘要: Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high-kappa gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility mu(FE) improvements of similar to 86.0% and 112.5% are observed for LTPS-TFTs with HfO2 gate dielectric after N-2 and NH3 plasma surface treatments, respectively. In addition, the N2 and NH3 plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility mu(FE) at high gate bias voltage V-G, resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage V-TH similar to 0.33 V, excellent subthreshold swing S.S. similar to 0.156 V/decade, and high field-effect mobility mu(FE) similar to 62.02 cm(2) /V . s would be suitable for the application of system-on-panel.
URI: http://dx.doi.org/10.1109/LED.2008.2004781
http://hdl.handle.net/11536/8194
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2004781
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 11
起始頁: 1236
結束頁: 1238
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