標題: A Novel Technique for Growing Crack-Free GaN Thick Film by Hydride Vapor Phase Epitaxy
作者: Huang, Hsin-Hsiung
Chen, Kuei-Ming
Tu, Li-Wei
Chu, Ting-Li
Wu, Pei-Lun
Yu, Hung-Wei
Chiang, Chen-Hao
Lee, Wei-I
電子物理學系
Department of Electrophysics
關鍵字: GaN;HVPE;freestanding GaN;CL;TEC
公開日期: 1-Nov-2008
摘要: To prevent the cracking of GaN thick films grown on a sapphire substrate by hydride vapor phase epitaxy (HVPE), a novel technique without complex processes is developed. By adding a temperature ramping step in the HVPE GaN epitaxy process, more than 300-mu m-thick high-quality crack-free GaN thick films on sapphire substrate can be obtained by this technique. After separation by a conventional laser-induced lift-off process, a 1.5 in. 300 mu m freestanding GaN wafer with a dislocation density of approximately 1 x 10(7) cm(-2) could be fabricated without any cracks. No additional designed-patterned or stress-reduced structures were applied in these samples to reduce the dislocation density and thermal stress. [DOI: 10.1143/JJAP.47.8394]
URI: http://dx.doi.org/10.1143/JJAP.47.8394
http://hdl.handle.net/11536/8177
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.8394
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 47
Issue: 11
起始頁: 8394
結束頁: 8396
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