標題: Electrical bistable memory device based on a poly(styrene-b-4-vinylpyridine) nanostructured diblock copolymer thin film
作者: Huang, Ching-Mao
Liu, Yung-Sheng
Chen, Chen-Chia
Wei, Kung-Hwa
Sheu, Jeng-Tzong
材料科學與工程學系
材料科學與工程學系奈米科技碩博班
Department of Materials Science and Engineering
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
關鍵字: nanostructured materials;nanotechnology;polymer blends;polymer films;random-access storage
公開日期: 17-Nov-2008
摘要: This paper describes the performance of a nonvolatile memory device based on a solution-processed poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) diblock copolymer thin film. The Al/PS-b-P4VP/indium tin oxide memory device featuring metal-coordinated 30 nm P4VP cores exhibited an ON/OFF ratio of 2x10(5), an erase voltage of 0.75 V, a write voltage of -0.5 V, and a retention time of 10(4) s. The device exhibited a metallic behavior in the ON state, suggesting the formation of metallic filaments through the migration of Al atoms into the P4VP domain during writing. Such nanostructured diblock copolymer thin films open up avenues for fabricating organic memory devices using simple procedures.
URI: http://dx.doi.org/10.1063/1.3028336
http://hdl.handle.net/11536/8141
ISSN: 0003-6951
DOI: 10.1063/1.3028336
期刊: APPLIED PHYSICS LETTERS
Volume: 93
Issue: 20
結束頁: 
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