Title: The investigation of capture/emission mechanism in high-k gate dielectric soft breakdown by gate current random telegraph noise approach
Authors: Chung, Steve S.
Chang, C. M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: current fluctuations;electric breakdown;high-k dielectric thin films;random noise
Issue Date: 24-Nov-2008
Abstract: In this paper, the trapping/detrapping in high-k gate dielectrics has been analyzed by gate current random telegraph noise (I(G)) measurement. Gate current is suppressed when traps capture electrons and recovers for empty traps. By statistically extracting capture and emission times, we can understand the trap properties. Besides, the influence will be understood by observing the variation of Gate current fluctuation. Through the analysis of the device after soft-breakdown (SBD), the deterioration of the dielectric will change the capture cross section. Moreover, the traps in the SBD path have been identified as the cause of a huge increase in the gate leakage.
URI: http://dx.doi.org/10.1063/1.3036681
http://hdl.handle.net/11536/8136
ISSN: 0003-6951
DOI: 10.1063/1.3036681
Journal: APPLIED PHYSICS LETTERS
Volume: 93
Issue: 21
End Page: 
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