標題: Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors
作者: Feng, Li-Wei
Chang, Ting-Chang
Liu, Po-Tsun
Tu, Chun-Hao
Wu, Yung-Chun
Yang, Che-Yu
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: Fluorine doped oxide (SiOF);Poly-Si;Thin film transistor (TFT);Lightly doped drain (LDD);Direct current (DC) stress
公開日期: 1-Dec-2008
摘要: The novel process of self-aligned fluorine doped oxide (SiOF) spacers on low temperature poly-Si (LTPS) lightly doped drain (LDD) thin film transistors (TFTs) is proposed. A fluorine doped oxide spacers were provided to generate the lower dissociation Si-F bonds adjusted to the interface of the drain which is the largest lateral electric field region for lightly doped drain structure. The stronger Si-F bonds can reduce the bonds broken by impact ionization. It is found that the output characteristics of SiOF spacers TFTs show the superior immunity to kink effect. The degradations in Vth shifting, subthreshold slope, drain current and transconductance of SiOF spacers after DC stress are improved. (C) 2008 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2008.04.106
http://hdl.handle.net/11536/8118
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2008.04.106
期刊: THIN SOLID FILMS
Volume: 517
Issue: 3
起始頁: 1204
結束頁: 1208
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