A study on aluminum induced crystallization and aluminum induced lateral crystallization of amorphous silicon at low temperature
To study the phenomenon of aluminum induced crystallization and aluminum induced lateral crystallization is the purpose of this thesis. The samples were glass substrates which had been coated a thin film of amorphous silicon on. In order to study the phenomenon of aluminum induced lateral crystallization, the samples were treated with lithography process before aluminum was coated on them at current conditions of 15V, 3.5A and 25V, 5.6A. This treatment made that some areas of the samples did not contact with aluminum. After heat treatments at 450℃, 475℃and550℃, we found that the phenomenon of aluminum induced crystallization occurred by analyzing the X-ray diffraction patterns. The lateral crystallization were also observed in the SEM images of the samples which was coated aluminum at 25V, 5.6A. By comparing the results which obtained from experiments in different coating conditions and different heat treatment conditions, the surface morphology of aluminum layer determines whether lateral crystallization occurs or not. Temperature is the main fact which influences the velocity of lateral crystallization.
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