標題: 以鋁誘導非晶矽低溫結晶及側向結晶之研究
A study on aluminum induced crystallization and aluminum induced lateral crystallization of amorphous silicon at low temperature
作者: 蔡雨霖
Yu-Lin Tsai
劉增豐
朝春光
T.F. Liu
C.G. Chao
材料科學與工程學系
關鍵字: 金屬誘發再結晶;低溫多晶矽;MIC;LTPS
公開日期: 2006
摘要: 本論文的目的是研究鋁誘導非晶矽低溫結晶以及側向結晶的現象。使用試片是已經鍍覆一層非晶矽薄膜的玻璃基板。為了作鋁誘發側向結晶的觀察,試片先經過微影製程的處理後,再分別以15V、3.5A及25V、5.6A兩種電流條件蒸鍍上鋁,使試片的部份區域不與鋁接觸。 經過450℃、475℃、550℃的熱處理後,利用X-ray繞射發現皆有鋁誘發結晶的現象,而25V、5.6A電流條件的試片由電子顯微鏡的影像可以觀察到側向結晶的晶粒。比較不同的蒸鍍條件及熱處理條件所得結果得知,鋁的表面形貌會決定有否產生側向結晶,而溫度是影響側向結晶速度的主要因素。
To study the phenomenon of aluminum induced crystallization and aluminum induced lateral crystallization is the purpose of this thesis. The samples were glass substrates which had been coated a thin film of amorphous silicon on. In order to study the phenomenon of aluminum induced lateral crystallization, the samples were treated with lithography process before aluminum was coated on them at current conditions of 15V, 3.5A and 25V, 5.6A. This treatment made that some areas of the samples did not contact with aluminum. After heat treatments at 450℃, 475℃and550℃, we found that the phenomenon of aluminum induced crystallization occurred by analyzing the X-ray diffraction patterns. The lateral crystallization were also observed in the SEM images of the samples which was coated aluminum at 25V, 5.6A. By comparing the results which obtained from experiments in different coating conditions and different heat treatment conditions, the surface morphology of aluminum layer determines whether lateral crystallization occurs or not. Temperature is the main fact which influences the velocity of lateral crystallization.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT009418504
http://hdl.handle.net/11536/81151
Appears in Collections:Thesis


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