標題: Improved RF Power Performance in a 0.18-mu m MOSFET Which Uses an Asymmetric Drain Design
作者: Chang, T.
Kao, H. L.
McAlister, S. P.
Horng, K. Y.
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Asymmetric;lightly doped-drain (LDD);MOS;RF Power
公開日期: 1-Dec-2008
摘要: We have fabricated 0.18-mu m asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-mu m MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power E performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.
URI: http://dx.doi.org/10.1109/LED.2008.2007509
http://hdl.handle.net/11536/8088
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2007509
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 12
起始頁: 1402
結束頁: 1404
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