標題: Dependence of Photosensitive Effect on the Defects Created by DC Stress for LTPS TFTs
作者: Tai, Ya-Hsiang
Kuo, Yan-Fu
Lee, Yun-Hsiang
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: DC stress;leakage current;photosensitivity;poly-Si thin-film transistor (TFT)
公開日期: 1-Dec-2008
摘要: In this letter, the photosensitive effect of n-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) after dc stress was investigated. It was discovered that the photo-generated carrier behaviors under optical illumination are related to defect types created by different stress conditions of hot-carrier effect and self-heating effect. These two types of defect creation result in the different photosensitivity behaviors of LTPS TFT. A model considering the relation between photosensitivity and defect is proposed to explain the anomalous illumination behaviors after device degradation.
URI: http://dx.doi.org/10.1109/LED.2008.2006414
http://hdl.handle.net/11536/8086
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2006414
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 12
起始頁: 1322
結束頁: 1324
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