Title: Effects of annealing temperature on the resistance switching behavior of CaCu(3)Ti(4)O(12) films
Authors: Shen, Yu-Shu
Chiou, Bi-Shiou
Ho, Chia-Cheng
Innovative Packaging Research Center
Department of Electronics Engineering and Institute of Electronics
Innovative Packaging Research Center
Issue Date: 1-Dec-2008
Abstract: In this study, a novel material CaCu(3)Ti(4)O(12) (CCTO), for resistance random access memory application, was prepared by sol-gel method and annealed at various temperatures. The crystallinity and microstructure of CCTO film, improve as annealing temperature increases. The CCTO films annealed at 800 degrees C and above endure more switching cycles (> 1000) and exhibit a small degradation of the resistance ratio between the high resistance state and the low resistance state than those annealed at 700 degrees C do. The correlation between resistance switching behaviors and film microstructure is discussed. (C) 2008 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2008.06.034
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2008.06.034
Volume: 517
Issue: 3
Begin Page: 1209
End Page: 1213
Appears in Collections:Articles