標題: Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method
作者: Tsay, Chien-Yie
Cheng, Hua-Chi
Tung, Yen-Ting
Tuan, Wei-Hsing
Lin, Chung-Kwei
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Transparent oxide semiconductors;ZnO thin films;Sn doping;Sol-gel method
公開日期: 1-Dec-2008
摘要: In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sri doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 degrees C for 10 min and then annealed in air at 500 degrees C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 x 10(2) Omega-cm. (C) 2008 Elsevier B.V All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2008.06.030
http://hdl.handle.net/11536/8070
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2008.06.030
期刊: THIN SOLID FILMS
Volume: 517
Issue: 3
起始頁: 1032
結束頁: 1036
Appears in Collections:Articles


Files in This Item:

  1. 000262053800006.pdf