Full metadata record
DC FieldValueLanguage
dc.contributor.authorMa, Ming-Wenen_US
dc.contributor.authorChiang, Tsung-Yuen_US
dc.contributor.authorWu, Woei-Cherngen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:10:33Z-
dc.date.available2014-12-08T15:10:33Z-
dc.date.issued2008-12-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2008.2006543en_US
dc.identifier.urihttp://hdl.handle.net/11536/8067-
dc.description.abstractIn this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO(2) gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO(2)/poly-Si interfacial layer on N- and P-channel LTPS-TFTs are also specified. In order to enhance the characteristics of HfO(2) LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, thus increasing the carrier mobility and reducing the phonon scattering. The CMOS LTPS-TFTs with HfO(2) gate dielectric and oxygen plasma treatment would be suitable for the application of system-on-panel.en_US
dc.language.isoen_USen_US
dc.subjectHigh-kappaen_US
dc.subjectlow-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs)en_US
dc.subjectoxygen plasmaen_US
dc.subjectsystem-on-panel (SOP)en_US
dc.subject3-D integrationen_US
dc.titleCharacteristics of HfO(2)/Poly-Si Interfacial Layer on CMOS LTPS-TFTs With HfO(2) Gate Dielectric and O(2) Plasma Surface Treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2008.2006543en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume55en_US
dc.citation.issue12en_US
dc.citation.spage3489en_US
dc.citation.epage3493en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000261466900021-
dc.citation.woscount8-
Appears in Collections:Articles