標題: Characteristics of HfO(2)/Poly-Si Interfacial Layer on CMOS LTPS-TFTs With HfO(2) Gate Dielectric and O(2) Plasma Surface Treatment
作者: Ma, Ming-Wen
Chiang, Tsung-Yu
Wu, Woei-Cherng
Chao, Tien-Sheng
Lei, Tan-Fu
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: High-kappa;low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs);oxygen plasma;system-on-panel (SOP);3-D integration
公開日期: 1-Dec-2008
摘要: In this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO(2) gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO(2)/poly-Si interfacial layer on N- and P-channel LTPS-TFTs are also specified. In order to enhance the characteristics of HfO(2) LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, thus increasing the carrier mobility and reducing the phonon scattering. The CMOS LTPS-TFTs with HfO(2) gate dielectric and oxygen plasma treatment would be suitable for the application of system-on-panel.
URI: http://dx.doi.org/10.1109/TED.2008.2006543
http://hdl.handle.net/11536/8067
ISSN: 0018-9383
DOI: 10.1109/TED.2008.2006543
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 55
Issue: 12
起始頁: 3489
結束頁: 3493
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