Title: A gate-coupled PTLSCR/NTLSCR ESD protection circuit for deep-submicron low-voltage CMOS IC's
Authors: Ker, MD
Chang, HH
Wu, CY
Department of Electronics Engineering and Institute of Electronics
Keywords: electrostatic discharge;ESD protection circuit;gate-couple technique;low-voltage-triggered lateral SCR;PMOS-triggered lateral SCR;NMOS-triggered lateral SCR;human-body model;machine model;charged device model;ESD-implant process
Issue Date: 1-Jan-1997
Abstract: A novel electrostatic discharge (ESD) protection circuit, which combines complementary low-voltage-triggered lateral SCR (LVTSCR) devices and the gate-coupling technique, is proposed to effectively protect the thinner gate oxide of deep submicron CMOS IC's without adding an extra ESD-implant mask, Gate-coupling technique is used to couple the ESD-transient voltage to the gates of the PMOS-triggered/NMOS-triggered lateral silicon controlled rectifier (SCR) (PTLSCR/NTLSCR) devices to turn on the lateral SCR devices during an ESD stress, The trigger voltage of gate-coupled lateral SCR devices can be significantly reduced by the coupling capacitor, Thus, the thinner gate oxide of the input buffers in deep-submicron low-voltage CMOS IC's can be fully protected against ESD damage, Experimental results have verified that this proposed ESD protection circuit with a trigger voltage about 7 V can provide 4.8 (3.3) times human-body-model (HBM) [machine-model (MM)] ESD failure levels while occupying 47% of layout area, as compared with a conventional CMOS ESD protection circuit.
URI: http://hdl.handle.net/11536/806
ISSN: 0018-9200
Volume: 32
Issue: 1
Begin Page: 38
End Page: 51
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  1. A1997WA65300006.pdf