|標題:||Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||metal-insulator boundaries;molybdenum;molybdenum compounds;nanostructured materials;oxidation;rapid thermal annealing;reduction (chemical);semiconductor storage;transmission electron microscopy;X-ray photoelectron spectra|
|摘要:||An oxygen incorporated Mo silicide was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge storage characteristics of Mo nanocrystals influenced by the Mo oxide and the surrounding oxide were investigated through x-ray photoelectron spectroscopy and the electrical measurement. X-ray photoelectron spectra analyses revealed the redox reaction in the oxygen incorporated Mo silicide layer after rapid thermal annealing. The memory window and retention were improved due to reduction in Mo oxide.|
|期刊:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
Files in This Item: