標題: Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
作者: Lin, Chao-Cheng
Chang, Ting-
Tu, Chun-Hao
Chen, Wei-Ren
Hu, Chih-Wei
Sze, Simon M.
Tseng, Tseung-Yuen
Chen, Sheng-Chi
Lin, Jian-Yang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: metal-insulator boundaries;molybdenum;molybdenum compounds;nanostructured materials;oxidation;rapid thermal annealing;reduction (chemical);semiconductor storage;transmission electron microscopy;X-ray photoelectron spectra
公開日期: 1-Dec-2008
摘要: An oxygen incorporated Mo silicide was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge storage characteristics of Mo nanocrystals influenced by the Mo oxide and the surrounding oxide were investigated through x-ray photoelectron spectroscopy and the electrical measurement. X-ray photoelectron spectra analyses revealed the redox reaction in the oxygen incorporated Mo silicide layer after rapid thermal annealing. The memory window and retention were improved due to reduction in Mo oxide.
URI: http://dx.doi.org/10.1063/1.3039065
http://hdl.handle.net/11536/8053
ISSN: 0003-6951
DOI: 10.1063/1.3039065
期刊: APPLIED PHYSICS LETTERS
Volume: 93
Issue: 22
結束頁: 
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